MOS

I сокр. от mean opinion score средняя экспертная оценка II сокр. от metal-oxide-semiconductor структура (типа) металл - оксид - полупроводник, МОП-структура - adjustable-threshold MOS - aluminum-gate MOS - back-gate MOS - beam-addressed MOS - bipolar MOS - bulk complementary MOS - buried channel MOS - buried-oxide MOS - clocked complementary MOS - complementary MOS - depletion MOS - dielectric insulated MOS - dielectric isolated MOS - diffusion self-aligned MOS - double polysilicon MOS - double poly MOS - double-diffused MOS - double-implanted MOS - dynamic complementary MOS - enhancement MOS - enhancement/depletion MOS - floating-gate avalanche injection MOS - floating-gate MOS - high-density MOS - high-performance complementery MOS - high-threshold MOS - high-voltage MOS - insulated gate MOS - ion-implanted MOS - isolated gate MOS - junction gate MOS - lateral planar MOS - local oxidation MOS - long MOS - low-threshold MOS - metal-gate MOS - micrometer MOS - micron MOS - n-channel MOS - p-channel MOS - polysilicon self-aligned MOS - poly self-aligned MOS - power MOS - quadruple self-aligned MOS - refractory MOS - resistive-gate MOS - scaled-down MOS - scaled MOS - Schottky -barrier MOS - self-aligned MOS - silicon-gate technology MOS - silicon-gate MOS - silicon-on-sapphire complementary MOS - stacked transistors complementary MOS - submicrometer MOS - submicron MOS - surface gate MOS - three-dimensional MOS - transverse MOS - triple-polysilicon MOS - triple-poly MOS - V-groove MOS - V MOS