I сокр. от mean opinion score
средняя экспертная оценка
II сокр. от metal-oxide-semiconductor
структура (типа) металл - оксид - полупроводник, МОП-структура
- adjustable-threshold MOS
- aluminum-gate MOS
- back-gate MOS
- beam-addressed MOS
- bipolar MOS
- bulk complementary MOS
- buried channel MOS
- buried-oxide MOS
- clocked complementary MOS
- complementary MOS
- depletion MOS
- dielectric insulated MOS
- dielectric isolated MOS
- diffusion self-aligned MOS
- double polysilicon MOS
- double poly MOS
- double-diffused MOS
- double-implanted MOS
- dynamic complementary MOS
- enhancement MOS
- enhancement/depletion MOS
- floating-gate avalanche injection MOS
- floating-gate MOS
- high-density MOS
- high-performance complementery MOS
- high-threshold MOS
- high-voltage MOS
- insulated gate MOS
- ion-implanted MOS
- isolated gate MOS
- junction gate MOS
- lateral planar MOS
- local oxidation MOS
- long MOS
- low-threshold MOS
- metal-gate MOS
- micrometer MOS
- micron MOS
- n-channel MOS
- p-channel MOS
- polysilicon self-aligned MOS
- poly self-aligned MOS
- power MOS
- quadruple self-aligned MOS
- refractory MOS
- resistive-gate MOS
- scaled-down MOS
- scaled MOS
- Schottky -barrier MOS
- self-aligned MOS
- silicon-gate technology MOS
- silicon-gate MOS
- silicon-on-sapphire complementary MOS
- stacked transistors complementary MOS
- submicrometer MOS
- submicron MOS
- surface gate MOS
- three-dimensional MOS
- transverse MOS
- triple-polysilicon MOS
- triple-poly MOS
- V-groove MOS
- V MOS