GOUY-CHAPMAN-STERN MODEL OF THE DOUBLE LAYER

"A model of the electrical double layer. The Gouy-Chapman model predicts an unrealistically large surface concentration, because it assumes that the ions are infinitely small and can get infinitely close to the surface of the electrode. The ""Stern modification"" is essentially a combination of the Helmholtz and Gouy-Chapman models. It assumes a ""plane of closest approach"" where a portion of the excess ions reside and attaches to this a Gouy-Chapman type ""diffuse layer."" "